BAP65-02
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? NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 5 — 28 September 2010
2 of 9
NXP Semiconductors
BAP65-02
Silicon PIN diode
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
continuous reverse voltage
- 30 V
IF
continuous forward current
- 100 mA
Ptot
total power dissipation Ts
?
90
?C-715mW
Tstg
storage temperature
?65 +150
?C
Tj
junction temperature
?65 +150
?C
Tamb
ambient temperature
?40 +85
?C
Table 5. Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth j-s
thermal resistance from junction
to soldering point
85 K/W
Table 6. Characteristics
Tj
= 25?C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF
=50mA
- 0.9 1.1 V
IR
reverse leakage current
VR
=20V
--20nA
Cd
diode capacitance
VR
=0V; f=1MHz
- 0.65 - pF
VR
= 1 V; f = 1 MHz
- 0.55 0.9 pF
VR
=3V; f=1MHz
- 0.5 0.8 pF
VR
=20V; f=1MHz
- 0.375 - pF
rD
diode forward resistance IF
= 1 mA; f = 100 MHz - 1 -
?
IF
= 5 mA; f = 100 MHz
[1]
- 0.65 0.95
?
IF
=10mA; f=100MHz
[1]
- 0.56 0.9
?
IF
= 100 mA; f = 100 MHz - 0.35 -
?
?s21?2
isolation
VR
=0; f=900MHz
- 10 - dB
VR
= 0; f = 1800 MHz
- 5.8 - dB
VR
= 0; f = 2450 MHz
- 4.4 - dB
?s21?2
insertion loss
IF
= 1 mA; f = 900 MHz - 0.11 - dB
IF
= 1 mA; f = 1800 MHz - 0.13 - dB
IF
= 1 mA; f = 2450 MHz - 0.16 - dB
?s21?2
insertion loss
IF
= 5 mA; f = 900 MHz - 0.08 - dB
IF
= 5 mA; f = 1800 MHz - 0.11 - dB
IF
= 5 mA; f = 2450 MHz - 0.13 - dB
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